Presentation Information
[18p-S2_203-3]Research on Energy-Efficient DC-DC Converter for BSPDN Using Oxide Semiconductor TFT
〇Ayumu Nagai1, Masaharu Kobayashi1 (1.The Univ. of Tokyo)
Keywords:
oxide semiconductor,integrated DC-DC converter,backside power delivery network (BSPDN)
This research fully integrates switched-capacitor (SC) DC-DC converter using IGO TFTs into a BSPDN, aiming to deliver power with high-efficiency to modern processors which is requiring large currents. Materials, layout, compact model for IGO TFT, circuit topology, and IR drop of BSPDN are investigated and analyzed. Long-channel TFTs are fabricated and SPICE simulations are performed using extracted compact model. 2:1 step-down SC DC-DC converter is designed and fabricated. Furthermore, it is proposed that by distributing the SC DC-DC converter within the BSPDN, active voltage conversion and current supply are performed on BSPDN without consuming transistor area. System-level simulations quantitatively estimated the potential for IR drop reduction using distributed fully-integrated DC-DC converters.