[18p-S2_203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[18p-S2_203-6] Metal Crystal Plating on Seedless Insulating Films Using New Electrolytic Technology

〇Haruo Iwatsu¹, Manabu Ishimaru² (1.KMP Lavatory, 2.Kyushu Institute of technology)

Keywords:

interconnection,Crystal,Plating

In conventional fine wiring processes, wiring has been embedded by electroplating using barrier and seed films as conductive films, but recently, wiring materials such as Co and Ru, which do not require high-resistance barrier films, have been considered. With this new electrolytic technology, bottom-up embedding into wiring trenches is achieved without additives on an interlayer insulating film that does not have a conductive film, and the formation of a large-grain single-crystal film reduces wiring resistance. Here, we report on the successful formation of a single-crystal metal film on an SiO2 film.