[18p-S2_203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[18p-S2_203-8] Study on Achieving Both Low Resistivity and High Adhesion of Ru Thin Films for Next-generation LSI Interconnects

〇Yusuke Mizobata¹, Kensei Kugio¹, Rozu Henmi¹, Kaito Tabata¹, Sho Hamano¹, Takahisa Tanaka¹, Munehiro Tada¹ (1.Keio Univ.)

Keywords:

semiconductor,interconnect

This study investigates achieving both low resistivity and high adhesion in Ru thin films for next-generation LSI interconnects using Ta liners. Results of films deposited by sputtering showed that 0.3 nm Ta insertion enhanced Ru(002) orientation. The as-deposited resistivity was 21.5 μΩ·cm, which is lower than that of Ru single layers. After annealing, the resistivity reached 13.4 μΩ·cm. Ultrathin Ta layers are effective for improving properties through orientation control and film densification.