[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-3] Ab initio characterization of split-type impurity-vacancy pairs in β-Ga₂O₃

〇Ryota Yamada¹, Sosuke Iwamoto¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka)

Keywords:

Ga2O3,Ab initio calculation,point defect