[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-4] Development of High-Frequency Ga₂O₃ Schottky Barrier Diodes for Application to Rectenna Circuits for Mcrowave Wireless Power Transmission

〇(M1)Yuto Tabata¹, Yudai Suehiro¹, Romualdo A. Ferreyra¹, Takuya Tsutsumi¹, Shun Konno², Kosuke Usui², Daisuke Matsuo², Yoshiki Iba³, Yuma Terauchi³, Junya Yoshinaga^3,4, Yoshinao Kumagai³, Yasuo Ohno⁵, Masataka Higashiwaki^1,6 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORPORATION, 5.Laser Systems Inc., 6.NICT)

Keywords:

Gallium Oxide,Schottky Barrier Diode,Wireless Power Transmission

We have been developing high-frequency Schottky barrier diodes (SBDs) using Ga2O3 with the large breakdown electric field, which are intended to apply for improving the RF-to-DC conversion efficiency of microwave wireless power transmission systems. In this study, we fabricated and characterized lateral Ga2O3 SBDs with anode microelectrodes and characterized their electrical properties. The SBD with an anode diameter of 8 μm exhibited superior DC device characteristics typified by an ideality factor of 1.11.