[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-W8E_101-5] β-Ga₂O₃ Trench-Implemented MOS Schottky Barrier Diodes with Breakdown Voltage of 1844 V and PFOM of 0.81 GW/cm²

〇Akio Takatsuka¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

Keywords:

Gallium oxide,Power device,Schottky barrier diode

In this presentation, we report on recently developed β-Ga₂O₃ trench MOS-type Schottky barrier diodes (MOSSBDs). The fabricated β-Ga₂O₃ trench MOSSBDs exhibited an on-resistance of 4.2 mΩ·cm² and a breakdown voltage of 1844 V. The power figure of merit (PFOM) of this device was 0.81 GW/cm², which is the highest value ever reported among β-Ga₂O₃ diodes with a Schottky interface.