[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-6] Ga₂O₃ MOS Capacitors with Si-Implanted AlO_x Insulators

〇(M1)Keita Shoji¹, Daisuke Matsuo², Shun Konno², Kosuke Usui², Yasunori Andoh³, Kohei Tanaka², Masataka Higashiwaki^1,4 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Nissin Electric, 4.NICT)

Keywords:

Ga2O3,Ion implantation,AlOx

In this study, we performed Si-ion implantation into AlOx insulating thin films at low energy and characterized their electrical properties. The AlO_x(25 nm)/n-Ga₂O₃ MOS diodes that were fabricated with the Si implantation at 7 keV, followed by thermal annealing at 500°C showed excellent capacitance–voltage characteristics typified by little hysteresis and flat-band shift.