[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-7] The Effects of Pre-Deposition Treatments on ALD-Al₂O₃/β-Ga₂O₃ MOS Interface Properties: Degradation by TMAH Etching and Improvement by O₃ Surface Oxidation

〇Hayama Imaida¹, Atsushi Tamura², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)

Keywords:

Ga2O3,TMAH,O3

In this study, we systematically investigated the effects of TMAH etching and O₃ surface oxidation prior to dielectric deposition on the interface properties of ALD-Al₂O₃/β-Ga₂O₃ MOS structures. TMAH etching degraded the interface properties, whereas O₃ pre-treatment partially mitigated this degradation. Furthermore, the use of O₃ as an oxidant during ALD-Al₂O₃ deposition significantly improved the interface properties, demonstrating that O₃ oxidation is effective not only before but also during deposition.