[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-8] Improvement of SiO₂/β-Ga₂O₃ (001) MOS interface properties employing ALD with O₃ as an oxidant under low-temperature process (600°C)

〇Atsushi Tamura¹, Hayama Imaida², Koji Kita^1,2 (1.GSFS, The Univ. of Tokyo, 2.School of Eng., The Univ. of Tokyo)

Keywords:

Ga2O3,MOS,ALD

In β-Ga₂O₃ MOS, high-temperature (1000°C) oxygen PDA improves MOS interface characteristics but degrades the substrate's electrical properties. Previously, we reported that using O₃ as an oxidant to deposit alumina by ALD enables good interface characteristics even with low-temperature (600°C) PDA. In this study, we applied this to SiO₂/Ga₂O₃ MOS. The results showed that samples formed with interface SiO₂ by supplying O₃ as an oxidant for a long time exhibited a smaller hysteresis width and reduced Dit compared to those with short O₃ supply, demonstrating good interface characteristics even at low-temperature PDA.