[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[18p-W8E_101-9] Multi-fin normally-off β-Ga₂O₃ vertical transistor with a breakdown voltage exceeding 10 kV

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Kentaro Ema¹, Yuki Ueda¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal, inc.)

Keywords:

beta-Ga2O3,vertical MOS transistor,breakdown voltage

We demonstrated a multi-fin normally-off β-Ga₂O₃ vertical transistor with a breakdown voltage exceeding 10 kV, a threshold voltage of +0.68 V, specific on-resistance of 289 mΩ·cm² and power figure-of-merit of over 0.35 GW/cm². The vertical transistor was fabricated on a low-donor-concentration (N_d-N_a = 1.8×10¹⁵ cm^-3) and thick (thickness = 85 µm) epitaxial layer grown on a β-Ga₂O₃ (011) substrate by halide vapor phase epitaxy to enhance the breakdown voltage. The breakdown voltage exceeding 10 kV is the highest reported for β-Ga₂O₃ vertical transistors.