[1P01-32] Poster session

[1P09] Analyses of structure and growth modes of alpha-sexithiophene thin films on epitaxial graphene

*Satoru Kato¹, Rinshiro Okada¹, Souma Nishinakamura¹, Keisuke Sagisaka², Shinya Ohno¹ (1. Graduate School of Engineering Science, Yokohama National University (Japan), 2. National Institute for Materials Science (NIMS) (Japan))

This study investigates the growth and orientation of alpha-sexithiophene films on epitaxial graphene on silicon carbide. Using AFM, STM, and Raman spectroscopy, we analyzed the graphene structure and 6T deposition. High-quality graphene with honeycomb lattices and moire patterns was observed via STM. Furthermore, STM revealed that 6T molecules initially nucleate at defect sites like SiC steps and local strain fields, aligning parallel to the steps. As shown in Figure 4-26 for a 5 angstrom deposition, 6T exhibited two distinct orientations: an edge-on orientation forming thick multilayer islands near the steps, and a face-on orientation forming single-layer islands on the flat terraces. At thicker depositions up to 100 angstroms, 6T formed wire-like structures due to dominant intermolecular forces. These findings demonstrate that graphene morphology dictates the local molecular orientation of 6T films, offering essential guidelines for designing advanced organic electronics.

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