[1P01-32] Poster session

[1P16] Reactive sputtering using sulfur plasma for low-temperature thin-film deposition of wurtzite-type solid-solution ZnO_1−xS_x (0 ≤ x ≤ 1)

*Daiki Motai¹, Issei Suzuki¹, Hitoshi Tampo², Takehiko Nagai³, Norio Terada², Masami Aono⁴, Takahisa Omata¹ (1. Tohoku University (Japan), 2. AIST (Japan), 3. Kindai University (Japan), 4. Kagoshima University (Japan))

Reactive sputtering using sulfur plasma enables the fabrication of crystalline sulfide thin films at low substrate temperatures. In this study, ZnO_1−xS_x thin films, which are difficult to fabricate over the entire composition range (0 ≤ x ≤ 1) because high-temperature deposition induces phase separation and conventional low-temperature deposition results in non-crystalline films, were deposited on SiO₂ glass substrates at 200 °C by reactive sputtering using a ZnO target and sulfur plasma. The composition was controlled by varying the RF power applied to the ZnO target. Wurtzite-structured thin films were deposited throughout the entire composition range. The c-axis lattice parameter varied linearly with S/(O+S) in accordance with Vegard's law. The composition dependence of the optical band gap exhibited pronounced bowing behavior, reaching a minimum value of 2.9 eV at x = 0.49. These results indicate the formation of ZnO_1−xS_x over the entire composition range.

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