Presentation Information
[1P18]Impacts of substrate bias voltage on electrical and optical properties of silicon- and nitrogen-doped diamond-like carbon films deposited via plasma-enhanced chemical vapor deposition
*Rintaro Takemura1, Ayame Hosokawa1, Shota Ito1, Yushi Suzuki1, Yoshiharu Enta1, Yasuyuki Kobayashi1, Hideki Nakazawa1 (1. Graduate School of Science and Technology, Hirosaki University (Japan))
[Summary]
We investigated the effects of substrate bias voltage on the electrical and optical properties of diamond-like carbon films doped with silicon and nitrogen (Si-N-DLC) deposited via RF plasma-enhanced CVD, as well as on the I–V characteristics of Si-N-DLC/p-type Si (p-Si) heterojunction solar cells. The bandgap energy of Si-N-DLC films decreased from 1.87 eV to 1.32 eV with increasing substrate bias voltage, likely due to an increase in the number and size of sp2 carbon clusters. The dark I–V curves of Si-N-DLC/p-Si solar cells fabricated at substrate bias voltages of -500 V and -1000 V were measured. When the substrate bias voltage increased, the forward current increased while the reverse current decreased, leading to an improvement in the rectification ratio at ±1.5 V, which increased from 4.18 to 26.1. Furthermore, in the I–V characteristics of the solar cells under white-light illumination, the short-circuit current density increased with increasing substrate bias voltage.
We investigated the effects of substrate bias voltage on the electrical and optical properties of diamond-like carbon films doped with silicon and nitrogen (Si-N-DLC) deposited via RF plasma-enhanced CVD, as well as on the I–V characteristics of Si-N-DLC/p-type Si (p-Si) heterojunction solar cells. The bandgap energy of Si-N-DLC films decreased from 1.87 eV to 1.32 eV with increasing substrate bias voltage, likely due to an increase in the number and size of sp2 carbon clusters. The dark I–V curves of Si-N-DLC/p-Si solar cells fabricated at substrate bias voltages of -500 V and -1000 V were measured. When the substrate bias voltage increased, the forward current increased while the reverse current decreased, leading to an improvement in the rectification ratio at ±1.5 V, which increased from 4.18 to 26.1. Furthermore, in the I–V characteristics of the solar cells under white-light illumination, the short-circuit current density increased with increasing substrate bias voltage.
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