[1P01-32] Poster session

[1P20] Exploration of MoS₂ Thin-Film Growth Using CS₂ as a Sulfur Source

*Minori Shinohara¹, Hiroki Waizumi², Seiya Yokokura², Toshihiro Shimada² (1. Graduate School of Science and engneering, hokkaido university (Japan), 2. Graduate School of Engineering,hokkaido University (Japan))

Monolithic 3D integration requires low-temperature deposition to avoid thermal damage to underlying devices. In this study, we investigated the low-temperature synthesis of MoS₂ thin films using CS₂ as a sulfur source, combined with halogen addition to promote surface diffusion. MoO₃ deposited on an Al₂O₃ substrate was sulfurized at 500–800 ℃. Raman spectroscopy confirmed MoS₂ formation, and the coexistence of 2H and 1T′-like phases at 500 ℃, whereas the 2H phase became dominant at 800 ℃. Without chloride addition, the MoS₂ domains did not form a continuous film. Adding NH₂Cl or AlCl₃ as gas-phase Cl sources promoted lateral growth, and a continuous bilayer film was obtained locally with AlCl₃ at 800 ℃. At 500 ℃, however, MoS₂ formation was suppressed, likely due to degraded AlCl₃ and residual Al species inhibiting growth. Future work will optimize AlCl₃ gas-phase supply and separate chloride and sulfurization steps to achieve low-temperature continuous films.

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