Presentation Information
[1P21]Influence of Te Predeposition on the Structural Properties of Bi2Se3 Thin Films and Evaluation of Their Surface Electronic States
*Toshiki Mori1, Hiroki Waizumi2, Seiya Yokokura2, Toshihiro Shimada2 (1. Graduate School of Chemical Sciences and engineering, Hokkaido University (Japan), 2. Graduate School of Engineering, Hokkaido University (Japan))
Topological insulators host spin-polarized metallic surface states while being insulating in the bulk, attracting attention for future electronics. Bi2Se3 is a three-dimensional example, but Se vacancies introduce bulk carriers that mask its Dirac-cone surface state, so crystallinity control is essential. Thin-film growth is a promising route to overcome these issues. However, the influence of the initial growth stage on the crystal structure and surface state of the films remains poorly understood. To address this, films grown with different Te pre-deposition amounts were characterized by XRD and Raman, and further examined by LEED and ARPES. As a result, a small Te amount improved the c-axis order, whereas an excess degraded it. The Raman peaks also broadened. No clear surface state appeared for the film, whereas a single-crystal reference showed a clear one. This indicates that the surface quality is still insufficient, and we are now optimizing the growth conditions.
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