[1P01-32] Poster session

[1P22] Reactive sputtering with Se plasma: A low-temperature deposition process for crystalline ZnSe thin films

*Issei Suzuki¹, Haruki Kudo¹, Haruka Takahashi¹, Takahisa Omata¹ (1. Tohoku University (Japan))

Selenide thin films, which are key materials for photovoltaics and two-dimensional semiconductors, are usually deposited at high temperature because elemental Se vapor, the common Se source, shows low activity. In this study, we demonstrated low-temperature deposition of crystalline ZnSe by reactive sputtering using a Se plasma. A Zn target was sputtered with a simultaneous supply of the Se plasma, and films were deposited on SiO2 glass substrates at room temperature. XRD revealed that the film was 001-oriented wurtzite ZnSe, and its 002 reflection (full width at half maximum = 0.26°) was much smaller than that of a film sputtered from a ZnSe compound target (~1°). These results indicate that the high chemical potential of Se in the plasma state promotes crystallization without substrate heating, providing a promising low-temperature vacuum process for crystalline selenide thin films.

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