[1P01-32] Poster session

[1P32] Characterization of metal single crystals grown as substrates for functional carbon-based thin films

*Shigeru Suzuki¹, Maho Abe², Takenori Tanno², Masaki Ciba³, Kazumasa Sugiyama⁴, Kotaro Ishiji⁵, Tsuyoshi Kumagai⁶, Tsuguo Fukuda⁶ (1. Micro System Center, Tohoku University (Japan), 2. Research Institute of Electrical Communication, Tohoku University (Japan), 3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University (Japan), 4. Institute for Materials Research, Tohoku University (Japan), 5. SAGA-Light Source (Japan), 6. Fukuda Crystal Laboratory (Japan))

To fabricate thin films of functional carbon-based materials, it is required to develop high-quality, large-diameter substrates on which these thin films can be grown via heteroepitaxial processes. This is because functional carbon-based materials, such as graphene and diamond, possess excellent electrical properties, thermal conductivity, and mechanical properties, and they are expected to find applications in functional electronic materials and power semiconductors. In this study, to grow high-quality metal single crystals to serve as substrates for these carbon-based materials, the Czochralski method with a carbon susceptor (S-CZ) was applied. The crystallinity and relevant properties of these crystal ingots were characterized using X-rays and other techniques, by which information on lattice constants, surface state and composition are investigated.

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