[2D05-11] Surface Science (SS1) Physical Property

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[2D09] Electronic structure modification of Cu₂O(111) and (100) surfaces by atomic hydrogen adsorption

*Muhammad Irfandi¹, Masaaki Ando², Jeffrey Tanudji³, Takahiro Ozawa¹, Yasutaka Tsuda⁴, Akitaka Yoshigoe⁴, Michio Okada^2,3, Katsuyuki Fukutani^1,5 (1. Institute of Industrial Science, The University of Tokyo (Japan), 2. Graduate School of Science, The University of Osaka (Japan), 3. Institute for Radiation Sciences, The University of Osaka (Japan), 4. Materials Science Research Center, Japan Atomic Energy Agency (Japan), 5. Advanced Science Research Center, Japan Atomic Energy Agency (Japan))

Cuprous oxide (Cu₂O) is a promising catalyst for hydrogen generation via photoelectrochemical reaction of water splitting. However, previous study reported that Cu₂O suffers self oxidation to CuO. On the other hand, it is well known that hydrogen donates its electron in TiO₂ and induces in-gap state. Such in-gap state may affect the self-oxidation activity via hole trapping if it is formed in hydrogenated Cu₂O. In this study, we employ XPS and UPS to investigate the electronic structure modification of Cu₂O(111) and (100) due to atomic hydrogen adsorption. Our result shows that atomic hydrogen dose causes different effect on (111) and (100) surfaces. Downward band bending (~0.2 eV) and OH chemical state are observed on hydrogenated Cu₂O(111). This suggests that atomic hydrogen binds surface oxygen atom and donates its electron towards surface. Meanwhile, atomic hydrogen dose on Cu₂O(100) induces a peculiar Cu(OH)₂ chemical state. These findings demonstrate the significance of hydrogen interaction with Cu₂O surfaces.

Password required to view