[2D05-11] Surface Science (SS1) Physical Property

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[2D11] Hydrogen-induced low-temperature resistance anomaly in a CoPd alloy film

*Sudhansu Sekhar Das¹, Takahiro Ozawa¹, Katsuyuki Fukutani^1,2 (1. University of Tokyo, Japan (Japan), 2. Advanced Science Research Center, Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195, Japan (Japan))

The effect of low-temperature hydrogen implantation on the electrical transport of an 85-nm-thick Co₁₅Pd₈₅ film was studied by temperature-dependent resistance measurements. The film was implanted with different hydrogen doses at 25 K, heated to 95 K to enable hydrogen redistribution, and measured during cooling. The normalized resistance deviated below about 65 K and showed a broad anomaly between 40 and 55 K. Its temperature derivative exhibited a broad maximum whose amplitude increased with dose, while the peak shifted from about 50 K at lower doses to about 40 K at higher doses. This behavior is similar to the well-known 50 K anomaly in Pd–H systems and may be linked to hydrogen localization or correlated occupation of interstitial and trapping sites. The results reveal a hydrogen-concentration-dependent low-temperature resistance anomaly in Pd-rich CoPd films.

Password required to view