[2D12-21] Surface Science (SS1) Physical Property

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[2D13] Barrier thickness dependence of interfacial charge transfer in transparent SrNbO3/SrZrO3/SrTiO3 heterostructures

*Yuuki Masutake¹, Ryotaro Hayasaka¹, Seitaro Inoue¹, Daisuke Shiga^1,2, Kenichi Ozawa², Hiroshi Kumigashira^1,2 (1. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, (Japan), 2. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) (Japan))

In this study, we investigated the suppression of inherent charge transfer in transparent SrNbO3/SrTiO3 junctions by inserting a transparent insulating SrZrO3 barrier layer. By taking advantage of Ti 2p-3d resonant photoemission spectroscopy, we directly visualized the change in charge transfer from SrNbO₃ to SrTiO₃ depending on the barrier layer thickness of SrZrO₃. It is found that the amount of charge transfer decays with a decay length of 1.0–1.2 nm with increasing barrier layer thickness. This value is much longer than the estimated value of 0.2 nm based on the electron tunneling model, suggesting that the extended d-p-d hybridization network formed at the interface plays an important role in the interfacial charge transfer. Our findings offer useful guidelines for the design and control of functionalities in oxide-based transparent devices.

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