[2D12-21] Surface Science (SS1) Physical Property

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[2D19] Soft X-ray irradiation-induced enhancement of the oxide growth: Roles of the photoexcited carrier generation due to the direct interband transition in dry oxidation and the electron-induced radical production in wet oxidation

*Yuki Okabe¹, Yasutaka Tsuda², Gakuto Imaizumi¹, Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Ogawa¹ (1. Department of Electrical Electronic Engineering, College of Industrial Technology, Nihon University (Japan), 2. Materials Sciences Research Center, Japan Atomic Energy Agency (Japan), 3. Tohoku University (Japan))

The soft X-ray (hν = 700 eV) irradiation-induced enhancement efficiency of the dry oxidation on n-Si(001), which was calculated from the oxide thickness was observed to decrease considerably from 36.6% at T = 25℃ to 3.5% at 500℃. On the other hand, the enhancement efficiency of the wet oxidation on n-Si(111) was maintained at the high level, 54.8% at 500℃ in comparison to 92.3% at 25℃. The spillover of the Si bands towards the oxide layer within 0.6 nm is responsible for the photoexcited carrier generation, which is caused by the direct interband transition through the energy loss of O 1s photoelectrons. The temperature dependence of the enhancement efficiency of Si dry oxidation is ascribed to the competition between the photoexcited carrier and the thermally excited minority carrier. On the other hand, the electron-impact production of H and OH radicals caused by the secondary electron from the Si substrate is associated with the oxide growth enhancement of Si wet oxidation.

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