[2E09-15] Two-Dimensional Materials 

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[2E12] Removal and reduction of oxidized germanene on Ag(111)

*Seiya Suzuki¹, Takahiro Ozawa², Yasutaka Tsuda¹, Tomo-o Terasawa^1,2, Daiki Katsube³, Masahiro Yano¹, Yukihiko Satou¹, Akitaka Yoshigoe¹ (1. Japan Atomic Energy Agency (Japan), 2. Institute of Industrial Science, The University of Tokyo (Japan), 3. Japan Fine Ceramics Center (Japan))

The chemical instability of germanene in air hinders its device applications, despite its potential for topological applications. We investigated methods for controlling oxidized germanene on Ag(111). Monolayer germanene was grown by atomic segregation epitaxy using an Ag(111) thin film/Ge(111) substrate. Immersion in water completely removed the Ge component originating from oxidized germanene. On the other hand, oxidized germanene was reduced by H₂ exposure at room temperature with the assistance of ionization gauges, suggesting that the reduction was caused by active hydrogen species generated by the gauges. To identify the hydrogen species responsible for the reduction, we performed irradiation with hydrogen ions and atomic hydrogen. Hydrogen ions caused no significant change, whereas atomic hydrogen at approximately 80 °C clearly reduced oxidized germanene. These findings may be useful in developing post-growth methods for controlling oxidized germanene.

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