Presentation Information
[2E15]Electronic structure of monolayer SnTe on graphene: an even-layer puckered structure
*Satoru Ichinokura1, Shunsuke Tsuda1, Kiyohisa Tanaka2, Koichiro Yaji1,3,4 (1. National Institute for Materials Science (Japan), 2. UVSOR Synchrotron Facility, Institute for Molecular Science (Japan), 3. Unprecedented-scale Data Analytics Center, Tohoku University (Japan), 4. Photon Science Innovation Center (PhoSIC) (Japan))
We report the momentum-resolved electronic structure of monolayer-limit SnTe films grown on graphene. By combining low-energy electron diffraction, momentum microscopy, angle-resolved photoemission spectroscopy, core-level spectroscopy, and first-principles calculations, we show that the graphene-supported monolayer limit is consistently described by a puckered even-layer biatomic-layer building block rather than by an ideal non-puckered square-flat structure. Polarization-dependent spectra reveal the out-of-plane and in-plane orbital characters of the valence bands, while comparison with constrained calculations suggests that graphene reduces the buckling amplitude and modifies the local interfacial electrostatic environment. These results clarify how substrate coupling controls the realistic electronic structure of two-dimensional SnTe beyond ideal free-standing models.
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