[2P01-29] Poster session

[2P09] Electronic structure changes at the solid-liquid interface and in the bulk of manganese oxide thin films under liquid conditions studied by Mn L-edge X-ray Absorption Spectroscopy

*Satsuki Okutomi¹, Fumitoshi Kumaki^1,2, Yuzuki Arishima¹, Kota Enomoto¹, Masanari Nagasaka^3,4, Hiroshi Kondoh¹ (1. Keio University (Japan), 2. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) (Japan), 3. Institute for Molecular Science (Japan), 4. SOKENDAI (Japan))

Electronic-state changes in MnO_x thin films under water-containing liquid environments were investigated by Mn L-edge XAS using simultaneous electron-yield and transmission modes. The spectra in electron-yield mode showed Mn(III)-like species near the surface even at low water concentrations, while bulk-sensitive spectra in transmission mode gradually changed toward higher oxidation states with increasing water content. This suggests that the water-induced oxidation proceeds from surface to bulk of the MnO thin film. Finally, the oxidation penetrates the entire thin film to form Mn₃O₄ with a Mn₂O₃ species at the surface.

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