[2P01-29] Poster session

[2P22] Fabrication of graphene quantum wires toward quantum dot devices

*Takeru Hayatsu¹, Takuya Iwasaki², Takashi Taniguchi², Kenji Watanabe², Yasushi Numata³, Tsuyoshi Hatano³ (1. Graduate School of Engineering, Nihon University (Japan), 2. National Institute for Materials Science (Japan), 3. College of Engineering, Nihon University (Japan))

Bilayer graphene (BLG) is a promising candidate for quantum-bit(quantum dot) devices,due to its high electron mobility and long spin coherence. Although physical patterningintroduces edge disorder, BLG enables electrostatic confinement. However, fabricationprocesses remain immature. This study investigates the fabrication of quantum dot devicesusing an hBN/BLG/hBN/graphite heterostructure. During electron-beam lithography forcontact holes, cracking occurred in the EB resist due to stress induced by drying and weakadhesion to the flat hBN surface. To suppress cracking, the exposure dose was increasedand the development temperature was lowered. This optimized process eliminatedcracking, enabling the fabrication of contact-hole patterns. However, the higher exposurecompromised the resolution of the narrow gap between the gates. This demonstrates thetrade-off between crack suppression and nanoscale resolution, offering valuable insights forthe fabrication of BLG quantum dots.

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