[2P01-29] Poster session

[2P27] In-situ TEM Study of Electro-Responsivity in Suspended GaSe Devices

*Mai Nakashima¹, Limi Chen¹, Yukiko Yamada-Takamura¹, Kohei Aso¹, Yoshifumi Oshima¹ (1. Japan Advanced Institute of Science and Technology (Japan))

When GaSe can be used as channel layers in electronic devices, the device can be switched on and off by changing carrier densities using photo- or electron irradiation instead of gate voltage. In this study, we quantitatively evaluate the effect of electron irradiation on the electrical conductivity of thin GaSe flake by our uniquely developed in-situ TEM. The current-voltage (I_ds-V_ds) curve of the GaSe device was measured for four different incident electron beam currents. We found that the drift current flowing the GaSe flake device increased with increasing incident electron beam current. Also, the “electro-responsivity”, which we define as the ratio of the increase in drift current to the incident beam current, was proportional to the voltage applied across the gap. Considering that the electric field within the GaSe layer is proportional to the applied voltage, these results indicate that the excited carriers contribute to the electro-responsivity.

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