[3E01-11] Surface Science / Chemical Property (SS2)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[3E09] Low-temperature graphene growth via acetylene decomposition on CeO₂

*Takeharu Yoshii¹, Mengxuan Zhang², Qi Zhao³, Yuichiro Hayasaka⁴, Devis Di Tommaso³, Hirotomo Nishihara^1,2 (1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University (Japan), 2. Advanced Institute for Materials Research (WPI-AIMR), Tohoku University (Japan), 3. School of Physical and Chemical Sciences, Queen Mary University of London (UK), 4. Tohoku Center of Excellence for Microscopy, Tohoku University (Japan))

Low-temperature graphene growth on CeO₂ via catalytic acetylene decomposition is demonstrated, and the underlying oxygen-vacancy-mediated growth mechanism is elucidated. Combined in situ spectroscopic analyses and density functional theory calculations reveal that oxygen-vacancy-mediated surface redox reactions initiate acetylene decomposition at 113°C, whereas graphene growth begins at around 300°C. Increasing the reaction temperature systematically transforms the carbon structure from graphene quantum dots to aggregated graphene and ultimately to porous graphene frameworks. These findings establish oxygen-vacancy engineering of reducible oxide surfaces as an effective strategy for low-temperature synthesis of graphene-based materials.

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