[1-1]Negative Resistance by Hot Carrier Annihilation
S. Mitsui(1.Mitsubishi Electric Co., Ltd.)
1969 Conference on Solid State Devices
Sep 26 - Sep 27, 1969Sankei Hall, Tokyo, Japan
You can search for presentations in this event.
Search
1969 Conference on Solid State Devices
Sep 26 - Sep 27, 1969Sankei Hall, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(38)
[1-2]Acoustoelectric Oscillation in n -In Sb
T. Arizumi, T. Aoki, K. Hayakawa(1.Nagoya University)
[1-3]Dynamics of Gunn Domains in Functional Bulk Oscillators
M. Shoji(1.Bell Telephone Laboratories)
[1-4]Fabrication of Planar-Type GaAs Bulk Effect Pulse Devices
K. Sekido, M. Takeuchi, Y. Takayama, F. Hasegawa, N. Hayakawa(1.Nippon Electric Co., Ltd.)
[2-1]Possibility of Negative Resistance Arising from Resonant Scattering of Carriers by Internal Impurity Level
T. Shimizu(1.Kanazawa University)
[2-2]Anomalous Domain Modes in CdS Propagating along C-Axis
S. Furukawa, T. Hata, T. Motosugi(1.Tokyo Institute of Technology)
[2-4]Mechanism of Coupling between Space-Charge Waves and Microwaves in a Bulk GaAs Traveling-Wave Amplifier
K. Kumabe, H. Kanbe, S. Ohara(1.Nippon Telegraph and Telephone Public Corporation)
[2-5]Effects of Nonuniform Conductivity on the Velocity-Field Characteristics of GaAs
M. Inoue, J. Shirafuji, Y. Inuishi(1.Osaka University)
[2-6]Pressure Effects on Gunn Devices
K. Nawata, K. Kodaira(1.Nippon Telegraph and Telephone Public Corporation)
[2-7]High Speed MOS Transistors by Electron Beam Exposure System
Y. Tarui, H. Teshima, H. Baba, M. Tamura(1.Electrotechnical Lab.)
[3-1]A Light-Focusing Fiber Guide Prepared by Ion-Exchange Techniques
I. Kitano, K. Koizumi, H. Matsumura, T. Uchida, M. Furukawa(1.Nippn Sheet Glass Co., Ltd., 2.Nippon Electric Co., Ltd.)
[3-2]Silicon Microwave Transistors Made by New Techniques
K. Fujinuma, T. Sakamoto, T. Abe, K. Sato, Y. Omura(1.Tokyo Shibaura Electric Co., Ltd.)
[3-3]ESR of Nitrogen-Ion-Implanted Sllicon
A. Doi, K. Gamo, K. Masuda, S. Namba(1.Osaka University)
[3-4]Defects In Silicon Generated Ion Implantation
T. Tsuchimoto, T. Ikeda, T. Tokuyama(1.Hitachi Ltd.)
[3-5]Germanosilicate Glass Silicon Device Technology
T. Abe, K. Sato, M. Konaka, A. Miyazaki(1.Tokyo Shibaura Electric Co., Ltd.)
[3-6]Bulk Nonlinear Property of Zinc Oxide Ceramics
M. Matsuoka, T. Masuyama, Y. Iida(1.Matsushita Electric Industrial Co., Ltd.)
[4-1]Diffusion Selfaligned MOST; A New Approach for High Speed Device
Y. Tarui, Y. Hayashi, T. Sekigawa(1.Electrotechnical Lab.)
[4-2]A Hybrid Type Field - Effect Transistor
Y. Terui, S. Horiuchi, K. Akiyama(1.Matsushita Electric Industrial Co., Ltd.)
[4-3]Single and Dual Gate FETs for UHF Applications
A. Ohwada, S. Yamamoto, K. Fujinuma, T. Narita(1.Tokyo Shibaura Electric Co., Ltd.)
[4-4]N-Channel MOSIC Utilizing Alumina Film
S. Nishimatsu, T. Tokuyama(1.Hitachi Ltd.)
[4-5]Al2O3-Complementary MOS Transistors
K. Nagano, T. Tanaka(1.Sophia University)
[5-1]GaAs Diffused Diodes for Harmonic Generator of Millimeter - Waves
M. Fujimoto, Y. Sato, Y. Ishii, H. Yamazaki(1.Nippon Telegraph and Telephone Public Corporation)
[5-2]Nonlinear Response of the Avalanche Diode Oscillators
K. Daikoku, Y. Mizushima(1.Nippon Telegraph and Telephone Public Corporation)
[5-3]Conduction Current Waveforms of Avalanche Diodes
M. Matsumura(1.Nippon Electric Co., Ltd.)
[5-4]The Effect of Junction Area of Silicon IMPATT Diodes
M. Kondo, M. Matsumura, Y. Okuto, I. Nagashima(1.Nippon Electric Co., Ltd.)
[5-5]Encapsulated Millimeter - wave Silicon Avalanche Diodes
K. Suzuki, M. Ohmori, T. Ueda(1.Nippon Telegraph and Telephone Public Corporation)
[6-1]Low Temperature Vapor Deposition of ZrO2 Films on Si Surfaces
K. Hoh, T. Sugano(1.University of Tokyo)
[6-2]Negative Mass Effect and the Energy Dispersion of Carriers in MOS Inversion Layers: Possibility of a Novel Solid State Oscillator
H. Maeda(1.Tokyo Shibaura Electric Co., Ltd.)
[6-3]Effect of Heat Treatments on Interface Mobility of Carriers in MOS Structures
T. Sugano, H. Sakaki, K. Hoh(1.University of Tokyo)
[6-4]Lock - On Phenomenon in Amorphous Semiconductors
M. Kikuchi, S. Iizima, M. Sugi, K. Tanaka(1.Electrotechnical Lab., 2.Sophia University)
[6-5]High Power Hybrid IC on Insulated Metal Substrates
N. Miura, Y. Fura, A. Kazami(1.Tokyo Sanyo Electric Co., Ltd.)
[6-6]A New Active Ultrasonic Detector
H. Hayakawa, T. Ishiguro, S. Tanaka, N. Mikoshiba, M. Kikuchi(1.Electrotechnical Lab.)
[7-1]Efficient GaP Red - Emitting Diodes Grown by Liquid - Phase Epitaxy
N. Wakamatsu, K. Maeda, M. Toyama, A. Kasami, M. Naito(1.Tokyo Shibaura Electric Co., Ltd.)
[7-2]Injection Luminescence in GaP Grown by Vapor Transpotation on a Ge Substrate
M. Aoki, H. Kasano(1.University of Tokyo)
[7-3]Conversion of Infrared into Visible Light
T. Kushida, M. Tamatani(1.Tokyo Shibaura Electric Co., Ltd.)
[7-4]New Type Photo Magnetic Diode (PMD)
Y. Otani, K. Matsubara, Y. Nishida(1.Kyoto University)
[7-5]Television Camera Tube with Silicon Electron Multpilication Target
S. Shirouzu, S. Miyashiro, S. Tsuji, S. Horiuchi(1.Tokyo Shibaura Electric Co., Ltd.)
[7-6]Function and Applications of Ferroelastoelectrics
A. Kumada(1.Hitachi Ltd.)
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