[OP]Welcome Address
H. Amano(General Chair, Organizing Committee)
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H. Amano(General Chair, Organizing Committee)
S. Zaima(President, The Japan Society of Applied Physics)
N. Chandrasekaran(Micron Technology, Inc. (USA))
D. Peters(Infineon Technologies AG (Germany))
K. Yano(Hitachi, Ltd. (Japan))
S. Noda(Kyoto Univ. (Japan))
○I. Osaka1(1.Hiroshima Univ. (Japan))
○T. Matsushima1,2,3, C. Qin1,2, K. Goushi1,2, F. Bencheikh1,2, T. Komino1,2, M. Leyden1,2, A.S.D. Sandanayaka1,2, C. Adachi1,2,3(1.OPERA, Kyushu Univ. (Japan), 2.JST-ERATO (Japan), 3.WPI-I2CNER, Kyushu Univ. (Japan))
○T. Kawane1, G.J. Matt2, S. Shrestha2, L. Jevgen2, C.J. Brabec2, A. Kanak3, P. Fochuk3, M. Kato1(1.NITech (Japan), 2.i-MEET (Germany), 3.Chernivtsi National Univ. (Ukraine))
○M.-C. Jung1, I. Maeng2, A. Matsuyama1, R. Abe1, J.-H. Yun3, M. Nakamura1(1.Nara Institute of Science and Technology (Japan), 2.Gwangju Institute of Science and Technology (Korea), 3.Univ. of Queensland (Australia))
○J. Shin1, S. Yang1, T. Lee2, C.-H. Lee1, G. Wang1(1.Korea Univ. (Korea), 2.Seoul National Univ. (Korea))
○Y. Kusaka1(1.AIST (Japan))
○C. Liu1, C. Liu1, H. Zhou2(1.Sun Yat-Sen Univ. (China), 2.Peking Univ. (China))
○S. Watanabe1, T. Nakayama1(1.Chiba Univ. (Japan))
○K. Fujita1, T. Harada1(1.Kyushu Univ. (Japan))
T. Saito1, T. Izumi1, K. Tanaka1, R.C. Advincula2,○H. Usui1(1.Tokyo Univ. Agricu. & Technol. (Japan), 2.Case Western Reserve Univ. (USA))
○A. Fujii1, T. Kitagawa1, M. Fujisaki1, S. Nagano2, N. Tohnai1, M. Ozaki1(1.Osaka Univ. (Japan), 2.Nagoya Univ. (Japan))
H. Han1, N.B. Sabani1, F. Takei1,2, K. Nobusawa1,○I. Yamashita1(1.Osaka Univ. (Japan), 2.National Defense Medical College (Japan))
○S. Ham1, M. Kang2, S. Jang1, J. Jang1, T.-W. Kim2, G. Wang1(1.Univ.of Korea (Korea), 2.Korea Inst. of Sci. and Tech. (Korea))
○J.H. Jeon1, W.J. Cho1(1.Univ. of Kwangwoon (Korea))
○K. Tadenuma1, Y. Iyama1, Y.H. Chang1, Y. Shintani1, H. Kawarada1,2(1.Waseda Univ. (Japan), 2.The Kagami Memorial Lab. for Materials Sci. and Tech. (Japan))
C.S. Liu1, C.H. Kao1,2,3, C.Y. Lin2, Y.W. Liu1, C.F. Lin1, C.H. Wang1, M. Das1,○Y.H. Lin1, K.L. Chen1(1.Chang Gung Univ. (Taiwan), 2.Chang Gung Memorial Hospital (Taiwan), 3.Ming Chi Univ. of Tech. (Taiwan))
○C.-W. Sun1(1.National Chiao Tung Univ. (Taiwan))
○S. Urayama1, H. Kino1, T. Fukushima1, T. Tanaka1(1.Tohoku Univ. (Japan))
○Z. Jiang1,2, K. Fukuda1,3, T. Someya1,2,3(1.The Thin-flim Device Lab, RIKEN (Japan), 2.Univ. of Tokyo (Japan), 3.CEMS, RIKEN (Japan))
○M. Sasaki1(1.Toyota Tech. Inst. (Japan))
○Z. Qian1, H. Hashimoto1, K.M. Lee1, R. Yabuki1, B. Du1, H. Kino1, T. Fukushima1, K. Kiyoyama2, T. Tanaka1(1.Tohoku Univ. (Japan), 2.Nagasaki Inst. of Applied Sci. (Japan))
○W.J. Kim1, Y. Nishikawa1, T.-T. Bui2, Q.-D. Dao3, A. Fujii1, M. Ozaki1(1.Osaka Univ. (Japan), 2.Univ. de Cergy-Pontoise (France), 3.VNU-Univ. of Science (Viet Nam))
○K. Sawada1,2, T. Tanaka1, T. Yokoyama2, R. Yamachi2, Y. Oka3, Y. Chiba3, H. Masai3, J. Terao3, K. Uchida1(1.Dept. of Materials Engineering. Univ. of Tokyo (Japan), 2.Dept. of Electronics and Electrical Engineering. Keio Univ. (Japan), 3.Dept. of Basic Sci. Graduate School of Arts and Sciences Univ. of Tokyo (Japan))
○T. Okamoto1,2,3(1.Univ. of Tokyo (Japan), 2.AIST (Japan), 3.PRESTO, JST (Japan))
M. Aiko1, Y. Yamanashi2, Y. Sasaki1, K. Nakahara2, T. Minamiki1, T. Koike2,○T. Minami1(1.Univ. of Tokyo (Japan), 2.JNC Petrochemical Corp. (Japan))
○E.K. Hong1, W.J. Cho1(1.Univ. of Kwangwoon (Korea))
○K. Oshima1, M. Saito1, M. Shintani2, K. Kuribara3, Y. Ogasahara3, T. Sato1(1.Kyoto Univ. (Japan), 2.NAIST (Japan), 3.AIST (Japan))
○Y. Ota1, R. Katsumi2, A. Osada1, M. Kakuda1, S. Iwamoto1,2, Y. Arakawa1(1.Nanoquine, Univ. of Tokyo (Japan), 2.IIS, Univ. of Tokyo (Japan))
○T. Maeda1,2, H. Ishii1, W.H. Chang1, T. Shimizu1, H. Ishii1,2, K. Ohishi1,2, A. Endoh2, H. Fujishiro2(1.AIST (Japan), 2.Tokyo Univ. of Sci. (Japan))
○X. Xu1, V. Fili1, T. Inaba1, T. Tawara1,2, H. Omi1,2, H. Gotoh1(1.NTT Basic Res. Labs. (Japan), 2.NTT Nanophotonics Center (Japan))
○Y. Ogiso1(1.NTT Corp. (Japan))
○J. Fujikata1, J. Han2, S. Takahashi1, K. Kawashita3, H. Ono1, S.-H. Jeong1, Y. Ishikawa3, M. Takenaka2, T. Nakamura1(1.PETRA (Japan), 2.Univ. of Tokyo (Japan), 3.Toyohashi Univ. Tech. (Japan))
○L. Virot1, D. Benedikovic2, G. Aubin2, J.-M. Hartmann1, B. Szelag1, F. Amar2, X. Le Roux2, C. Alonso-Ramos2, P. Crozat2, D. Marris-Morini2, E. Cassan2, C. Baudot3, F. Boeuf3, J.M. Fédéli1, C. Kopp1, L. Vivien2(1.Univ. Grenoble Alpes and CEA, LETI (France), 2.Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France), 3.STMicroelectronics, Silicon Technology Development (France))
○S. Ohno1, K. Toprasertpong1, S. Takagi1, M. Takenaka1(1.Univ. of Tokyo (Japan))
○Y. Miyatake1, N. Sekine1, K. Toprasertpong1, S. Takagi1, M. Takenaka1(1.Univ. of Tokyo (Japan))
○K. Hassan1, N. Lebbe1, L. Baud1, S. Garcia1, C. Dapogny2, E. Oudet2, A. Gliere1(1.CEA-LETI (France), 2.Univ. Grenoble Alpes, LJK (France))
○A. Martin1, P. Feneyrou1, J. Bourderionnet1(1.Thales Research and Technology (France))
○N.J. Jitcharoenchai1, N. Nishiyama1, H. Abe2, Y. Hinakura2, T. Baba2(1.Tokyo Inst. of Tech. (Japan), 2.Yokohama National Univ. (Japan))
○A. Marinins1, S.P. Dwivedi1, J. Ø. Kjellman1, S. Kerman, T. David1, B. Figeys1, R. Jansen1, D.S. Tezcan1, X. Rottenberg1, P. Soussan1(1.imec (Belgium))
○C. Alessandri1,2, I. Asselberghs1, S. Brems1, C. Huyghebaert1, J.V. Campenhout1, D.V. Thourhout2, M. Pantouvaki1(1.Imec (Belgium), 2.Ghent Univ. (Belgium))
○J.A. Goundar1, K. Suzuki2, H. Miura2(1.Department of Finemechanics, Graduate School of Engineering, Tohoku Univ. (Japan), 2.Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku Univ. (Japan))
K. Miyagi1, Y. Tanaka1,2, A. Minowa1, G. Nakamura1,○H. Isshiki1(1.The Univ. of Electro-Communications (Japan), 2.Shincron Co., LTD. (Japan))