Presentation Information
[M-7-04]Influence of Strain and Initial Surface on Heteroepitaxial SiGe Growth by CVD
〇Yuji Yamamoto1, Wei-Chen Wen1, Cedric Corley-Wiciak2, Agnieszka Anna Corley-Wiciak1,3, Ioan Costina1, Florian Bärwolf1, Fursenko Oksana1, Junichi Murota4, Bernd Tillack1,5 (1. IHP - Leibniz-Inst. für innovative Mikroelektronik (Germany), 2. ESRF – European Synchrotron Radiation Facility (France), 3. RWTH Aachen Univ. (Germany), 4. Micro System Integration Center, Tohoku Univ. (Japan), 5. Tech. Univ. Berlin (Germany))