[M-7] Group IV Materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[M-7-04] Influence of Strain and Initial Surface on Heteroepitaxial SiGe Growth by CVD

〇Yuji Yamamoto¹, Wei-Chen Wen¹, Cedric Corley-Wiciak², Agnieszka Anna Corley-Wiciak^1,3, Ioan Costina¹, Florian Bärwolf¹, Fursenko Oksana¹, Junichi Murota⁴, Bernd Tillack^1,5 (1. IHP - Leibniz-Inst. für innovative Mikroelektronik (Germany), 2. ESRF – European Synchrotron Radiation Facility (France), 3. RWTH Aachen Univ. (Germany), 4. Micro System Integration Center, Tohoku Univ. (Japan), 5. Tech. Univ. Berlin (Germany))

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