Presentation Information
[PS-02-03]Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics
〇Kyungsoo Park1, Chulwon Chung2, Boncheol Ku1, Seung Hyeon Yun1, Junhyeok Park1, Changhwan Choi1 (1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Energy Engineering, Univ. of Hanyang (Korea))