Presentation Information
[PS-02-09]Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory
〇Jaekyeong Kim1, Manh-Cuong Nguyen1,2, An Hoang-Thuy Nguyen1, Anh-Duy Nguyen1, Hyunsoo Kim1, Kyungsoo Hwang1, Geon Park1, Hoyeon Shin1, Siun Song1, Daewoong Kwon2, Rino Choi1 (1. Inha Univ. (Korea), 2. Hanyang Univ. (Korea))