[PS-02] 02: Advanced and Emerging Memories / New Applications

[PS-02-11] Analysis of Cell Characteristic using Back Oxide Trap Charge Effect in 3D-NAND Flash

Daewoong Kang¹, 〇Chaeyeon Jung^1,2, Minkyo Suh^1,3, Gwansun Choi^1,3, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.PS-02-11

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