Presentation Information
[PS-02-14]Fatigue Recovery and Endurance Improvement under Low Operating Voltage of HfZrO2/Ge MF(I)S Capacitor fabricated at BEOL-Compatible Temperature
〇Jai-Youn Jeong1,2, Kyeol Ko1, Kyunghwan Kim1, Changhwan Shin2, Jae-Hoon Han1 (1. The Korea Inst. of Science and Technology (KIST) (Korea), 2. The Korea Univ. (Korea))