Presentation Information
[PS-02-18]High Performance BEoL-Compatible FeRAM with Robust Endurance >109 Cycles by Two Pr > 32 uC/cm2 HfZrO2 Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor
〇Hiroshi Yoshida1, Min-Hung Lee2, Shang-Shiun Chuang1, Chuan-Hua Chang1, Wen-Hsiang Hsieh1, Yung-Lung Hsu1, Shih-Chi Yen1, Zong-Han Li2, Fu-Sheng Chang2, Ming-Han Liao3, Shou-Zen Chang1 (1. Powerchip Semiconductor Manufacturing Corporation (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan University (Taiwan), 3. Graduate School of Advanced Technology and Department of Mechanical Engineering, National Taiwan University (Taiwan))