Presentation Information
[PS-02-26]Multibit P-type Fe-GAAFETs Utilizing HfO2/ZrO2 Superlattice Dielectric and SiGe/Si Superlattice Channel with Record Characteristics via Quantum Mechanisms for High-Density 1T NVM Applications
〇Yi Ju Yao1、Tsai Jung Lin1、Bo Xu Chen2、Chen You Wei1、Yung Teng Fang2、Heng Jia Chang2、Yu Min Fu1、Guang Li Luo3、Fu Ju Hou3、Yung Chun Wu1,2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan)、2. Department of Engineering and System Science, National Tsing Hua University (Taiwan)、3. Taiwan Semiconductor Research Institute (Taiwan))