[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-02] Improvement in channel mobility of recess-gate GaN MOSFET with Al_0.28Si_0.72O gate dielectric using AlGaN/GaN selective-area regrowth method on GaN-on-Si substrate

〇Po-Chin Huang¹, Daimotsu Kato¹, Jumpei Tajima¹, Hiroshi Ono¹, Masahiko Kuraguchi¹, Toshiki Hikosaka¹ (1. Corporate Research & Development Center, Toshiba Corp. (Japan))

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