Presentation Information
[PS-04-03]Electrical Characteristics of Aluminum Oxide and Aluminum Oxynitride with a Thin SiO2 Interfacial Layer as Gate Stack Dielectric on the Nitric Oxide (NO) Gas Treated Silicon Carbide (SiC) Substrate as the MOS Capacitor under Rapid Thermal Annealing
〇Cheng-Li Lin1, Bo-Xian Su1, Yu-Lun Lee1, Pi-Chun Juan2 (1. Feng Chia Univ. (FCU) (Taiwan), 2. Ming Chi Univ. of Tech.(MCUT) (Taiwan))