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Reduced Ohmic Contact Resistance in AlGaN/GaN HEMTs via Graphene Insertion and Recessed Patterns

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04: Power / High‐speed Devices and Materials

2024 International Conference on Solid State Devices and Materials

Presentation Information

[PS-04-07]Reduced Ohmic Contact Resistance in AlGaN/GaN HEMTs via Graphene Insertion and Recessed Patterns

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