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Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures

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04: Power / High‐speed Devices and Materials

2024 International Conference on Solid State Devices and Materials

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[PS-04-08]Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures

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