[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-12] First-principles Study on Electronic Structure and Optoelectronic Properties of P-doped β-Ga₂O₃ with Intrinsic Defects

〇Hui Li¹, Dongyuan Zhai¹, Qihao Zhang¹, Jiwu Lu¹ (1. The Univ. of Hunan (China))

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