[PS-04] 04: Power / High‐speed Devices and Materials

[PS-04-13] High-Frequency Performance of AlGaN/GaN MIS-HEMTs for Cryogenic Applications

〇Chuang-Ju Lin^1,2, Bo-Jun Huang², Bo-Yuan Chen¹, Kun-Ming Chen¹, Edward Yi Chang² (1. The Inst. of Taiwan Semiconductor Research (Taiwan), 2. The Univ. of National Yang Ming Chiao Tung (Taiwan))

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