Presentation Information
[PS-08-05]Enhancing the resistive switching properties of transparent HfO2-based memristor devices for reliable gasistor
〇Taegi Kim1, Doowon Lee1,2, Myoungsu Chae3, Hee-Dong KIm1 (1. Sejong University (Korea), 2. IHP GmbH—Leibniz Institute for Innovative Microelectronics (Germany), 3. Institute of Industrial Science, University of Tokyo (Japan))