[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-02] Fluorination Mechanism and Physical Properties of In₂O₃:F Thin-film Transistors

〇Jiayi Wang^1,2, Kuo Zhang^1,2,3, Ziheng Bai², Nannan You^1,2, Yang Xu^1,2, Ling Li^2,3, Di Geng^2,3, Shengkai Wang^2,3 (1. High-Frequency High-Voltage Device and Integrated Circuits Research & Development Center, Institute of Microelectronics, Chinese Academy of Sciences (China), 2. Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences (China), 3. University of Chinese Academy of Sciences (China))

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