[SO-PS-01] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-01-08] Interfacial Trap Density Investigation of HfO₂-ZrO₂ Superlattice Gate Stacks with Ultra-low Equivalent Oxide Thickness

〇kun zhong^1,2,3, Zhaohao Zhang^1,2,3, Siyuan Liu^1,2,3, Yueyuan Zhang^1,2,3, Huaxiang Yin^1,2,3 (1. University of Chinese Academy of Sciences (China), 2. Institute of Microelectronics of the Chinese Academy of Sciences (China), 3. Integrated Circuit Advanced Process R&D Center and State Key Laboratory of Fabrication Technologies for Integrated Circuits (China))

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