Session Details
[PS-05]05: Photonics: Devices / Integration / Related Technology
Tue. Sep 3, 2024 3:00 PM - 5:00 PM JST
Tue. Sep 3, 2024 6:00 AM - 8:00 AM UTC
Tue. Sep 3, 2024 6:00 AM - 8:00 AM UTC
Poster Hall (Exhibition Hall A)(1st Floor)
[PS-05-01]High sensitivity and high-speed response surface-normal InGaAs photodetector with plasmonic grating for optical communication system
〇Toshiki Masuzawa1, Takuo Tanemura2, Atsushi Ono1,3 (1. Graduate School of Sci. and Tech., Shizuoka Univ. (Japan), 2. School of Engineering, The Univ. of Tokyo (Japan), 3. Res. Inst. of Electronics, Shizuoka Univ. (Japan))
[PS-05-02]Extended SWIR GeSn/Ge MQW photodiode for imaging of dim-light night vision
〇Cheng Li1 (1. Xiamen University (China))
[PS-05-03]Columnar 3D Silicon Photodiodes for Near-Infrared Sensing
〇Tetsuya Ariyoshi1, Naoya Iwamoto1 (1. Fukuoka Inst. of Tech. (Japan))
[PS-05-04]Development of Uni-Travelling Carrier Photodiode as a Terahertz Wave Emitter for Non-Destructive Applications
〇Jin Chul Cho1, Dong Woo PARK1, Soo Cheol KANG1, Eui Su Lee1 (1. Electronics and Telecommunications Research Inst. (Korea))
[PS-05-05]Development of A-plane ZnMgO Electro-optic Thin-films for UV Optical Modulators
〇Lei Meng1, Xueyou Yuan2, Tianrui Zhai1, Tomoaki Yamada2 (1. Beijing Univ. of Tech. (China), 2. Nagoya Univ. (Japan))
[PS-05-06]SiN Waveguide Development for Graphene-Based Modulators:
Thickness Influence on Light Propagation Loss
〇Rasuole Lukose1, Pawan Kumar Dubey1, Ashraful Islam Raju1, Anna Peczek1, Aleksandra Kroh1, Andreas Krüger1, Marco Lisker1,2, Mindaugas Lukosius1, Andreas Mai1,2 (1. Leibniz Institute for High Performance Microelectronics (Germany), 2. Technical University of Applied Science (Germany))
[PS-05-07]Room Temperature Polarization-Dependent Photocurrent Characteristics of Near-Infrared Photodiode Based on Dilute Nitride GaNAs
〇Daiki Mineyama1, Satoshi Hiura1, Kaito Nakama2, Hidetoshi Hashimoto2, Keisuke Minehisa2, Junichi Takayama1, Agus Subagyo1, Kazuhisa Sueoka1, Fumitaro Ishikawa2, Akihiro Murayama1 (1. IST, Hokkaido Univ. (Japan), 2. RCIQE, Hokkaido Univ. (Japan))
[PS-05-08]Frequency Dependent Transient Behavior of 2D Semiconductor Electroluminescent Device Under AC drive
〇James Singh Konthoujam1, Yen-Shou Lin1,2, Ya-Hui Chang1,2, Chiao-Yun Chang1, Yu-Wei Zhang1, Shih-Yen Lin1, Hao-Chung Kuo1,2, Min-Hsiung Shih1,2 (1. Academia Sinica (Taiwan), 2. National Yang Ming Chiao Tung University (Taiwan))
[PS-05-09]Propose of Filter-Free Spectroscopic Sensors on Epitaxial Layer Substrate to Realize Single-pixel Spectrometer
〇Yui Kato1, Yong-Joon Choi1, Tomoya Ide1, Takeshi Hizawa1, Daisuke Akai1, Yasuyuki Kimura1, Kazuhiro Takahashi1, Toshihiko Noda1, Kazuaki Sawada1 (1. Toyohashi Univ. of Tech. (Japan))
[PS-05-10]Modeling of Electroluminescence from n-Ge Metal-Insulator-Semiconductor Tunneling Junctions
〇Weijia Wang1, Min Xie1, Jihai He1, Xiaohua Ma1, Yue Hao1 (1. Xidian Univ. (China))
[PS-05-11]Investigation of Measurement Properties of Subsurface damaged layer on Silicide Semiconductor Wafer by Micro-Raman Tomographic Imaging
〇Teppei Onuki1, Kazuma Watanabe1, Haruhiko Udono1 (1. Ibaraki Univ. (Japan))
[PS-05-12]20-μm-Diameter Organic/Metal Thin-Film Whispering Gallery Mode Resonators and its Effect of Suppression of Exciton Quenching
〇Minami Takaishi1, Tokuji Yokomatsu2, Kazusuke Maenaka2, Takeshi Komino1 (1. Grad. Sch. Sci., Univ. Hyogo (Japan), 2. Grad. Sch. Eng., Univ. Hyogo (Japan))