[H-3] Wide Bandgap and Oxide Materials II

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[H-3-03] Improvement of Crystalline Quality in the AlN by the Polarity Inversion and the High-temperature Growth

〇Yusuke Takayanagi¹, Yuto Matsubara¹, Koki Fujii¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1. Tokushima Univ. (Japan), 2. Institute of Post-LED Photonics, Tokushima Univ. (Japan))