Presentation Information

[PS-02-04]Modeling Shallow and Deep Trapping Behavior Influenced by Tunneling Oxide in Charge Trap Flash Devices

〇Joonhyung Cho1,2, Joon Hwang1, Suyoung Park1, Min-Kyu Park3, Jong-Ho Lee1 (1. Seoul National Univ. (Korea), 2. SK Hynix Inc. (Korea), 3. Gachon Univ. (Korea))