Presentation Information

[PS-02-24]Intrinsic ion migration-induced Nitride-enhanced Memristor with ultralow operating voltage

〇Zijian Wang1,2, Xuemeng Fan1,2, Guobin Zhang1,2, Pengtao Li1,2, Shengpeng Xing1,2, Zhejia Zhang1,2, Qi Luo1,2, Baichen Zhu1,2, Yishu Zhang1,2 (1. Zhejiang University (China), 2. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China))