Presentation Information

[PS-04-04]Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress

〇peng liao1, Yanghao Wang1, Jianbin Guo1, QingQing Sun1, David Wei Zhang1, Hang Xu1 (1. The Univ. of Fudan (China))